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Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

Identifieur interne : 002B66 ( Main/Repository ); précédent : 002B65; suivant : 002B67

Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

Auteurs : RBID : Pascal:11-0238933

Descripteurs français

Pascal (Inist)
- Température substrat, Recuit thermique, Température recuit, Matériau dopé, Dopage, Addition gallium, Dépôt laser pulsé, Méthode ablation laser, Couche mince, Dépendance température, Densité porteur charge, Mobilité porteur charge, Mobilité électron, Facteur mérite, Oxyde de zinc, Spectre absorption, Rayonnement IR proche, Spectre IR, Oxyde d'indium, Cellule solaire, Optoélectronique, ZnO, 8115F, 8460J.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Absorption spectra, Annealing temperature, Carrier density, Carrier mobility, Doped materials, Doping, Electron mobility, Figure of merit, Gallium additions, Indium oxide, Infrared spectra, Laser ablation technique, Near infrared radiation, Optoelectronics, Pulsed laser deposition, Solar cells, Substrat temperature, Temperature dependence, Thermal annealing, Thin films, Zinc oxide.

Abstract

Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H₂ in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.

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Le document en format XML

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<author><name sortKey="Zhang, Yong Hang" uniqKey="Zhang Y">Yong-Hang Zhang</name>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Annealing temperature</term>
<term>Carrier density</term>
<term>Carrier mobility</term>
<term>Doped materials</term>
<term>Doping</term>
<term>Electron mobility</term>
<term>Figure of merit</term>
<term>Gallium additions</term>
<term>Indium oxide</term>
<term>Infrared spectra</term>
<term>Laser ablation technique</term>
<term>Near infrared radiation</term>
<term>Optoelectronics</term>
<term>Pulsed laser deposition</term>
<term>Solar cells</term>
<term>Substrat temperature</term>
<term>Temperature dependence</term>
<term>Thermal annealing</term>
<term>Thin films</term>
<term>Zinc oxide</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Température substrat</term>
<term>Recuit thermique</term>
<term>Température recuit</term>
<term>Matériau dopé</term>
<term>Dopage</term>
<term>Addition gallium</term>
<term>Dépôt laser pulsé</term>
<term>Méthode ablation laser</term>
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<term>Densité porteur charge</term>
<term>Mobilité porteur charge</term>
<term>Mobilité électron</term>
<term>Facteur mérite</term>
<term>Oxyde de zinc</term>
<term>Spectre absorption</term>
<term>Rayonnement IR proche</term>
<term>Spectre IR</term>
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<term>Cellule solaire</term>
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<term>8115F</term>
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<front><div type="abstract" xml:lang="en">Ga-doped ZnO films were prepared at 10 mTorr of oxygen over a broad temperature range using pulsed laser deposition. The carrier concentration of as-deposited films decreased monotonically with deposition temperature over a temperature range of 25°C to 450°C. Post-deposition annealing of as-deposited films in forming gas (5% H<sub>2</sub>
 in argon) or vacuum resulted in a substantial increase in both carrier concentration and electron mobility. The figure of merit was highest for films deposited at 250°C then annealed in forming gas at 400°C. The optical transmittance was near 90% throughout the visible and near-infrared spectral regions. These results indicate that Ga-doped ZnO is a viable alternative to transparent indium-based conductive oxides.</div>
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Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

Influence of Substrate Temperature and Post-Deposition Annealing on Material Properties of Ga-Doped ZnO Prepared by Pulsed Laser Deposition

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